YARIM O`TKAZGICHLAR XOSSALARIGA TASHQI TEMPERATURA TA`SIRINI O`RGANISH
##semicolon##
Kalit so`zlar: yarim o'tkazgichlar, temperatura, elektr o'tkazuvchanlik, energiya zonalari, kremniy, germaniy.##article.abstract##
Annotatsiya: Yarim o'tkazgich materiallari hozirgi elektronika va
texnologiyaning asosini tashkil etadi. Ushbu tadqiqotda yarim o'tkazgichlarning asosiy
xossalariga tashqi temperaturaning ta'siri o'rganildi. Temperatura o'zgarishining elektr
o'tkazuvchanlik, teshik va elektronlarning konsentratsiyasi hamda energiya zonalari
orasidagi farqga qanday ta'sir ko'rsatishi eksperimental ravishda kuzatildi. Natijalar
yarim o'tkazgichlarni turli sharoitlarda samarali qo'llash uchun ilmiy asos yaratadi.
##submission.citations##
Foydalanilgan adabiyotlar ro`yxati
1. Sze, S. M. K. (2006). Physics of Semiconductor Devices. Wiley-Interscience.
2. Neamen, D. A. (2012). Semiconductor Physics and Devices: Basic Principles.
McGraw-Hill Education.
3. Madelung, O. (1996). Semiconductors: Data Handbook. Springer.
4. Shockley, W. (1950). Electrons and Holes in Semiconductors. D. Van Nostrand
Company.
5. Tyagi, M. S. (1991). Introduction to Semiconductor Materials and Devices. Wiley.
6. Streetman, B. G., & Banerjee, S. K. (2015). Solid State Electronic Devices. Pearson.
